PART |
Description |
Maker |
K8A2815ETE |
128Mb E-die NOR FLASH
|
Samsung semiconductor
|
K4S280432F K4S280432F-TC75 K4S280432F-TL75 K4S2816 |
RES, 16.9, 1/16W, TKF, 1%, 0603 TV 11C 11#12 PIN RECP 128MB F-DIE SDRAM SPECIFICATION
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
M28R400CT100D16 M28R400CT-KGD M28R400CB100D16 M28R |
Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory 已知良品裸片4兆位56Kb的x16插槽,引导块.8V电源快闪记忆 KNOWN GOOD DIE 4 MBIT (256KB X16) 1.8V SUPPLY FLASH MEMORY
|
STMicroelectronics N.V. http:// ST Microelectronics
|
EM488M1644VTB-75F EM488M1644VTB-6F EM488M1644VTB-7 |
128Mb (2MBank16) Synchronous DRAM 128Mb (2MBank6) Synchronous DRAM 128Mb的(200万Bank6)同步DRAM 128Mb (2M??Bank??6) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
HFDOM44S6VXXX DOM44S6V1.5G DOM44S6V128 DOM44S6V1G |
44Pin Flash Disk Module Min.128MB ~ Max.3GB, True IDE Interface
|
HANBIT[Hanbit Electronics Co.,Ltd]
|
AM29LV200BB-70DFC AM29LV200BB-70DWI AM29LV200BB-90 |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 70 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 90 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 60 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56亩x 8-Bit/128亩x 16位).0伏的CMOS只,引导扇区快闪记忆体,修编模具1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56x 8-Bit/128x 16位).0伏的CMOS只,引导扇区快闪记忆体,修编模具1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 128K X 16 FLASH 3V PROM, 120 ns, UUC43 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位256亩x 8-Bit/128亩x 16位).0伏的CMOS只,引导扇区快闪记忆体,修编模具1 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 2兆位56亩x 8-Bit/128亩x 16位)3.0伏的CMOS只,引导扇区快闪记忆体,修编模具1
|
Advanced Micro Devices, Inc.
|
907-0010 912-0120 914-0040 914-0070 914-0140 912-0 |
PUNCH&DIE SET 3-12MM PUNCH&DIE 10.0MM CIRCULAR PUNCH&DIE 16.5MM CIRCULAR PUNCH&DIE 25.0MM CIRCULAR PUNCH&DIE 12.0MM CIRCULAR PUNCH&DIE 9.0MM CIRCULAR PUNCH&DIE 20.0MM CIRCULAR PUNCH&DIE 12.5MM CIRCULAR STRIPPER 37.0 X 13.7 D CON STRIPPER 31.75MM DIAMETER 低产31.75MM直径 LOUVRE TOOL 卢浮宫工 PUNCH&DIE 10.0MM CIRCULAR STRIPPER 67.2 X 16.5 D CON
|
Peregrine Semiconductor, Corp. Molex, Inc.
|
K8A1215EZC |
512Mb C-die NOR FLASH
|
Samsung semiconductor
|
K8A56ETC |
256Mb C-die NOR FLASH
|
Samsung semiconductor
|
S70WS512N00BAWA30 S70WS512N000BAWA33 |
32M X 16 FLASH 1.8V PROM, 80 ns, PBGA84 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
|
SPANSION LLC
|
K9F4G08U0D |
4Gb D-die NAND Flash
|
Samsung
|